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SiSA40DN

www.vishay.com Vishay Siliconix

N-Channel 20 V (D-S) MOSFET

FEATURES • TrenchFET® Gen IV power MOSFET • Less than 1.1 m in a package footprint of 10.89 mm2 • 2.5 V rated RD S(on) • Optimized Qg , Qg d, and Qg d/ Qg s ratio reduce switching related power loss • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Synchronous rectification • Synchronous buck converter • Battery management • Load switching PRODUCT SUMMARY VD S (V) 20 RD S(on) max. () at VG S = 10 V 0.00110 RD S(on) max. () at VG S = 4.5 V 0.00145 RD S(on) max. () at VG S = 2.5 V 0.00420 Qg typ. (nC) 18.2 ID (A) 162 a Configuration Single PowerPAK® 1212-8 Single Top View 1 3 . 3 m m 3 . 3 m m Bottom View 1 S 1 S 2 S 3 S 4 G D 8 D 7 D 6 D 5 N-Channel MOSFET G D S

ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK 1212-8 SiSA40DN-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (T J = 150 °C)

SYMBOL

V DS V GS

TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C

Pulsed drain current (t = 100 μs)

I D I DM Continuous source-drain diode current T C = 25 °C T

A = 25 °C I S

Single pulse avalanche current Single pulse avalanche energy L = 0.1 mH I AS E AS T C = 25 °C T C = 70 °C Maximum power dissipation

T A = 25 °C T A = 70 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) c I P T J , T stg LIMIT

20 +12 / -8

162 129 43.7 b, c 35 b, c 150 47 3.3 b, c

20 20 52 33 3.7 b, c 2.4 b, c -55 to +150

260 UNIT

VA mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT t  10 s R thJA 24 33 Maximum junction-to-ambient b °C/W Maximum junction-to-case (drain) Steady state R thJF 1.9 2.4 Notes a. Package limited b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 81 °C/W

f. Maximum un g. TC = 25 °C

S18-0644-Rev. A, 25-Jun-2018 Document Number: 76681 1

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SiSA40DN

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SPECIFICATIONS (T J = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT V Static

VD S VG S = 0 V, ID = 250 μA 20 - -

V DS temperature coefficient Drain-source breakdown voltage

VD S VG S = 0 V, ID = 250 μA 20 - - VD S/ TJ ID = 10 mA - 18 -

V GS(th) temperature coefficient V GS(th) /T J I D = 250 μA - -3.6 - mV/°C Gate-source threshold voltage V GS(th) V DS = V GS , I D = 250 μA 0.6 - 1.5 V Gate-source leakage I GSS V DS = 0 V, V GS = +12 / -8 V - - 100 nA

Zero gate voltage drain current I DSS

On-state drain current a Drain-source on-state resistance a Forward transconductance a

G SS D S G S ID SS VD S = 20 V, VG S = 0 V - - 1 VD S = 20 V, VG S = 0 V, TJ = 70 °C - - 15 ID (on) VD S 10 V, VG S = 10 V 40 - - RD S(on) VG S = 10 V, ID = 10 A - 0.00092 0.00110 VG S = 4.5 V, ID = 10 A - 0.00120 0.00145 VG S = 2.5 V, ID = 10 A - 0.00320 0.00420 gf s VD S = 15 V, ID = 10 A - 60 -

Ci ss VD S = 10 V, VG S = 0 V, f = 1 MHz - 3415 - Co ss - 1290 - Cr ss - 72 - Qg VD S = 10 V, VG S = 10 V, ID = 10 A - 35.2 53 VD S = 10 V, VG S = 4.5 V, ID = 10 A - 18.2 27.5 Qg s - 7.3 - Qg d - 3.6 - Rg f = 1 MHz 0.4 0.85 1.4 td (on) VD D = 10 V, RL = 1 , ID 1 0 A, VG EN = 10 V, Rg = 1 - 20 40 tr - 13 26 td (off) - 40 80 tf - 10 20 td (on) VD D = 10 V, RL = 1 , ID 10 A, VG EN = 4.5 V, Rg = 1 - 12 24 tr - 5 10 td (off) - 34 68 tf - 6 10

pF nC  ns Drain-Source Body Diode Characteristics Continuous source-drain diode current I S Pulse diode forward current I SM Body diode voltage V SD Body diode reverse recovery time t rr Body diode reverse recovery charge Q rr Reverse recovery fall time t a Reverse recovery rise time t b

TC = 25 °C IS = 5 A, VG S = 0 V IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C

S18-0644-Rev. A, 25-Jun-2018 Document Number: 76681 2

For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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SiSA40DN

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

150 100

VG S = 10 V thru 3 V

120 Current (A)

2nd line I D - Drain Current (A)

80 90

0 20 40 0 0.5 1 1.5 2 2.5 VD S - Drain-to-Source Voltage (V) 2nd line VG S = 1 V VG S = 2 V 0 30 60 0 0.8 1.6 2.4 3.2 2 n d l I D - D r a i n C VG S - Gate-to-Source Voltage (V) 2nd line TC = 25 °C TC = -55 °C TC = 125 °C

Output Characteristics Transfer Characteristics Axis Title 4 Axis Title 0.010 10 000 10000 10000 V GS = 2.5 V 0.004

100

0.002 R D S ( o n ) - VG S = 10 V, 4.5 V

0

18 36 54 72 1000 C rss

100 100 10 10 0 C oss 1000 1st line

2nd line 1000 0.006 2nd line C - Capacitance (pF)

0.008 1st line

2nd line 2nd line On-Resistance (Ω)

C iss 90 10 0 4 8 16 I D - Drain Current (A)

2nd line V DS - Drain-to-Source Voltage (V)

2nd line

On-Resistance vs. Drain Current and Gate Voltage Capacitance 1.7 1000 1st line

2nd line 6 4

100 VD S = 5 V, 10 V, 15 V

2 0 10

8 16 24 32 40 10000 1.5

VG S = 4.5 V, ID = 10 A

1000 1.3 1st line

2nd line I D = 10 A 8 2nd line R DS(on)

10000 0 20 Axis Title Axis Title 10 2nd line V GS - Gate-to-Source Voltage (V)

12 1.1

VG S = 10 V, ID = 10 A

0.9 0.7 10

-50 -25 0 25 50 75 100 125 150 Q g - Total Gate Charge (nC)

2nd line T J - Junction Temperature (°C)

2nd line

Gate Charge On-Resistance vs. Junction Temperature S18-0644-Rev. A, 25-Jun-2018 100 Document Number: 76681 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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SiSA40DN

www.vishay.com Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Axis Title Axis Title

10000 0.2 1000

T J = 150 °C 1 T

J = 25 °C 100 -0.4

100 0.1

-0.7 0.01

0.2 0.4 0.6 0.8 I D = 250 μA -1.0 10 0 10 -50 1.0 -25 0 25 75 100 125 150

T J - Temperature (°C)

2nd line

Source-Drain Diode Forward Voltage Threshold Voltage Axis Title Axis Title 0.005 10000 150 10000

ID = 10 A 120

1000 2nd line

Power (W)

1000 T J = 150 °C 0.002 90 1st line

2nd line 0.003

1st line

2nd line 2nd line R DS(on)

50 V SD - Source-to-Drain Voltage (V)

2nd line 0.004

-0.1 ID = 5 mA

1st line

2nd line 2nd line V GS(th)

2nd line 2nd line I S - Source Current (A)

0.5 10000 100 60 100 100 0.001 30

T J = 25 °C

0 10

0 2 4 6 8 0 0.001 10 10 0.01 0.1 1 10 V GS - Gate-to-Source Voltage (V)

2nd line Time (s) 2nd line On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient Axis Title 1000 10000 I DM limited I D limited 100 μs

1000 10 1st line

2nd line 2nd line I D - Drain Current (A)

100 1 ms Limited by R DS(on) (1) 10 ms 1 100 ms

100 1s 10s 0.1

DC T A = 25 °C Single pulse 0.01

0.01 (1) V BVDSS limited

10 0.1 1 10 100 V DS - Drain-to-Source Voltage (V) GS > minimum V GS at which R DS(on) is specified

Safe Operating Area, Junction-to-Ambient S18-0644-Rev. A, 25-Jun-2018 Document Number: 76681 4

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SiSA40DN

www.vishay.com Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Axis Title 200 10000 1000 120 1st line

2nd line 2nd line I D - Drain Current (A)

160 80

100 40 0 10

0 25 50 75 100 125 150

T C - Case Temperature (°C)

2nd line

Current Derating a Axis Title Axis Title 65 10000 2.0 52 10000 1.6 1.2 1st line

2nd line 26 2nd line

Power (W)

1000 1st line

2nd line 2nd line

Power (W)

1000 39 0.8 100 13 100 0.4 0 10

0 25 50 75 100 125 150 0 10

0 25 50 75 100 125 T C - Case Temperature (°C)

2nd line T A - Ambient Temperature (°C)

2nd line

Power, Junction-to-Case Power, Junction-to-Ambient 150 Note a. The power dissipation P D is based on T J max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S18-0644-Rev. A, 25-Jun-2018 Document Number: 76681 5

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SiSA40DN

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Axis Title

10000 Duty Cycle = 0.5 Notes: 0.2 1000 1st line

2nd line Normalized Effective Transient Thermal Impedance 1 P DM 0.1 0.1

t1 t2 1. Duty cycle, D = 2. Per unit base = Rt hJA t1 t2

0.05 0.02

2. Per unit base = Rt hJA = 3. TJ M - TA = PD MZ t hJA (t)

Single pulse 0.01

0.0001 0.001 0.01 100

4. Surface mounted

0.1 1 10 100 10 1000 Square Wave Pulse Duration (s)

2nd line

Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 1 10000 0.2 0.1

1000 0.05 0.1 1st line 2nd

line Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.02 100 Single pulse 0.01

0.0001 10 0.001 0.01 0.1 1 10

Square Wave Pulse Duration (s)

2nd line

Normalized Thermal Transient Impedance, Junction-to-Case                     Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?76681.

S18-0644-Rev. A, 25-Jun-2018 Document Number: 76681 6

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Package Information

www.vishay.com Vishay Siliconix

D4

PowerPAK ® 1212-8, (Single / Dual)

WH E2

E4 L K M θ e 1

Z

D5 D D2 2 2 D1 8 1 5 4

θ 4 b 3 L1 E3

A1 Backside view of single pad H 2 E1 E Detail Z L K E2 E4 D2 D3(2x)

D4 c A H 1 D1

2 K1 Notes 1. Inch will govern 2 Dimensions exclusive of mold gate burrs

3. Dimensions exclusive of mold flash and cutting burrs

D2 3 4 b θ D5 θ E3 Backside view of dual pad DIM.

MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 0.97 1.04 1.12 0.038 0.041 0.044 A1 0.00 - 0.05 0.000 - 0.002 b 0.23 0.30 0.41 0.009 0.012 0.016 c 0.23 0.28 0.33 0.009 0.011 0.013 D 3.20 3.30 3.40 0.126 0.130 0.134 D1 2.95 3.05 3.15 0.116 0.120 0.124 D2 1.98 2.11 2.24 0.078 0.083 0.088 D3 0.48 - 0.89 0.019 - 0.035 D4 0.47 typ. D5 2.3 typ.

0.0185 typ 0.090 typ E 3.20 3.30 3.40 0.126 0.130 0.134 E1 2.95 3.05 3.15 0.116 0.120 0.124 E2 1.47 1.60 1.73 0.058 0.063 0.068 E3 1.75 1.85 1.98 0.069 0.073 0.078 E4 0.034 typ. 0.013 typ. e 0.65 BSC 0.026 BSC K 0.86 typ. K1 0.35 - 0.034 typ. - 0.014 - - H 0.30 0.41 0.51 0.012 0.016 0.020 L 0.30 0.43 0.56 0.012 0.017 0.022 L1 0.06 0.13 0.20 0.002 0.005 0.008  0° - 12° 0° - 12° W 0.15 0.25 0.36 0.006 0.010 0.014 M 0.125 typ. 0.005 typ. ECN: S16-2667-Rev. M, 09-Jan-17 DWG: 5882 Revison: 09-Jan-17 Document Number: 71656 1

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Application Note 826

Vishay Siliconix

RECOMMENDED MINIMUM PADS FOR PowerPAK ® 1212-8 Single 0.152

(3.860)

0.039 0.068

(0.990) (1.725)

0.010 (0.255)

(2.390) 0.094 0.088 (2.235)

0.016 (0.405)

0.026 (0.660)

0.025 0.030

(0.635) (0.760)

Recommended Minimum Pads Dimensions in Inches/(mm)

Return to Index Return to Index

APPLICATION NOTE

Document Number: 72597 Revision: 21-Jan-08 www.vishay.com

7

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Revision: 01-Jan-2026 1 Document Number: 91000 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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