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Different from the bulky metamaterial composed of a threedimensional (3D) subwavelength structure, a metasurface is a kind of planar topology array. The metasurface is considered an artificial functional material, 1−5 due to its advantages of flexible phase control ability, 6−8 optional conversion modes in wideband or multiple bands, 9,10 ultrasmall thickness, 11−13 and other finely tailorable characteristics. 14−17 There have been many metasurface devices applied to manipulate electromagnetic (EM) waves such as reflective and transmissive polarization converters, 18−21 beam deflection, 22,23 a flat lens, 24 low-scattering materials, 25 etc. However, most previously mentioned devices have fixed structures and are generally difficult to adjust in real time, which greatly limits the scope of applications for metasurfaces.
With the demand for a miniaturized apparatus, reconfigurable metasurfaces have been gradually developed. The reconfigurable metasurfaces are typically implemented by polarized modulation and mechanical and electronic (PIN diode, varactor, and MEMS) techniques. 26−30 On the other hand, digital coding and programmable metasurfaces have rapidly evolved since 2014. 23,30−32 Cui et al. developed the first 1-bit and higher-bit information metasurfaces in the microwave frequency, 30 from which they further proposed the space-time-coding digital metasurfaces. 23 A metasurface proposed by Luo and co-workers © 2020 American Chemical Society can change its local phase distribution to achieve dynamical beam deflection and polarization transformation in the spatial domain. 33 In the field of optics, Maguid et al. reported a metasurface with multifunctional spin-dependent dielectrics, 34 which demonstrates the possibility to achieve complete control of the fundamental properties of light in different frequency bands. The phase response of the metasurfaces plays a key role in realizing the above unnatural physical phenomena and interesting functions, 32 whereas the existing theories and methods are mainly focused on the performance of metasurfaces with a phase gradient in the spatial domain, and the frequency domain properties are rarely explored. 35−38 Recently, Ratni et al. 39 loaded varactor on the unit cell to form an active metasurface, which can convert linearly polarized (LP) waves into circularly polarized (CP) waves in different frequency bands by adjusting the bias voltage. However, the performance of the
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where S f p and S sp are the scattering parameters of the p th unit cell in the frequency domain and spatial domain, f is the working frequency, and θ and φ are the elevation and azimuth angles corresponding to the scattered beam of the element, respectively. The scattering parameter matrix is a Jordan standard type, 42 so that the frequency- and spatial-domain scattering modulation functions of the unit do not interfere with each other. According to the modulated field E (r) p of each element, the scattering E-field of the metasurface can be induced current movement, so that the element can provide a 1- bit phase modulation in the spatial domain and have a wide working frequency bandwidth. The rectangular groove also brings variable factors to the scattering matrix S of the FSRM element, which may cause the frequency domain resonance of the unit to further increase f 5 . Each PIN diode is individually controlled to give the unit cell modulation scattering parameters greater freedom. The biasing mechanism of the bias circuit layer is deliberately designed to minimize the biasing circuit loss, and two layers are connected by metallized holes to simplify the structure; the active devices connect various portions of the driven layer to form a unitary body. 43 Furthermore, in order to suppress the influence of the high-frequency signal introduced by the power supply, two 27 nH inductors are placed between the bias line and the patch symmetrically.
A pair of PIN diodes are connected to the patches on both sides of the slots. The PIN diode (Skyworks SMP1340-040LF), which can work within 10 GHz, is employed in this paper to show low insertion loss and excellent electrical performance. 44 Moreover, the equivalent circuit of the PIN diode under different working conditions in the aimed frequency band is shown in Figure 1b. For the “ON” or “OFF” state, the PIN diode is modeled as a series of lumped resistance (R) and inductance (L) or resistance (R), capacitance (C), and inductance (L), respectively. To verify the functionalities and the reflection characteristics, the commercial software, HFSS 15.0 is used to analyze and optimize the proposed metasurface element. The element is simulated by a periodic boundary condition combined with Floquet port. Moreover, the PIN diodes and inductors are replaced by equivalent circuit models composed of lumped elements in the corresponding cases under the “ON” and “OFF” operating states.
2.3. Frequency-Domain-Controllable Polarization Converter. When the incident EM wave is LP with the electric field E (i) along the y direction or x direction, the metasurface can modulate the LP wave in the frequency domain. Accordingly, the FSRM can be regulated as a multifunctional polarization converter (MPC). The y-polarized incident wave is illustrated as an example, and the incident E-field radiated on the p th unit can be written as two orthogonal linear components
S sp ( θ , φ ) = α pn · exp [− jk ( x sin θ cos φ + y sin θ sin φ ) + j Φ p ]
(5) Scattering parameters are expanded in the frequency domain according to the Taylor series, where f 1 , f 2 , ... are different resonant frequencies, a pn , b pn , ... are nth-order resonance coefficients at the corresponding resonant frequencies, α n p is a set of spatial modulation coefficients, k is the wavenumber, and Φ p is the phase factor.
It is difficult for the fixed-structure particles to switch states in different frequency bands. In this design method, we introduce the frequency modulation technology and use PIN diodes to freely change the resonance frequency of the unit. The scattering parameters can also modulate EM waves in multiple directions, which will be analyzed in a later section. Figure 1a illustrates the modulation method mentioned above.
2.2. Design of FSRM Element. We present a metasurface to validate the FSRM design concept and the scattering parameter adjustment method. The geometrical configuration and detailed dimensions of the FSRM element are shown in Figure 1c,d. More specifically, the unit cell structure is composed of a driven patch layer, a metal ground (GND), and a bias circuit layer. These layers are spaced by two F4B substrates whose relative permittivity is 2.65 and loss angle tangent is 0.001. The driven patch layer is a square patch, which is divided into three blocks with different sizes by the gaps parallel to the diagonal direction of the patch. The structure and specific parameters of the unit are described in detail in the Supporting Information.
It is worth mentioning that the size ratio and shapes of the three blocks of the driven layer enable the unit cell to evidence reconfigurable characteristics in the frequency domain, and the resonant frequencies are f 1 , f 2 , f 3 , and f 4 in this configuration. By adjusting the positions of two parallel slots in the u direction, the central response frequency of each polarization conversion state will be changed. In order to connect the working frequency bands of the polarization conversion states smoothly, the area ratio of the three blocks is about 1:13:35. As the interconnection of the patches of the driven layer is changed, the drive path of the induced current and the resonant state of the driven layer are changed accordingly. Another novelty of the element is the introduction of a rectangular groove, which increases the path of Research Article
where E pu and E pv are components of E (i) p in the u and v directions, respectively; u and v indicate the unit vectors of the corresponding direction; k is the wavenumber in the free space. The vector direction of the incident E-field and its components are illustrated in Figure 1d. According to the scattering
practice, the incident E-field excites induced current (related to the scattering parameter) on the unit metal topology, and the reflected E-field can be expressed as the sum of two orthogonal components of the current 45 23556 https://dx.doi.org/10.1021/acsami.0c02467
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converted into the CP wave. 46 The AR of a reflected wave can be calculated by the principle of the transmission line in which G u and G v are the Green’s functions and J cw,u and J cw,v i j
where with the E-field and can be exempted from integration. Equation 7 can be further simplified to 23557 https://dx.doi.org/10.1021/acsami.0c02467
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According to eq 9, it can be inferred that the incident LP wave is converted to the LHCP wave when the phase difference Δϕ = 90°. Similarly, the LP wave can be converted to the RHCP wave as the incident wave has Δϕ = −90°. The polarization modulation scheme of the incident and reflected waves of MPC is depicted in Figure 2a.
Here, four states of 2-bit (“00” “01” “10” “11”) digital coding are used to describe the working states of the two PIN diodes in the unit cell, in which state “01” means that PIN diode #1 is “OFF” and PIN diode #2 is “ON”. As the interconnection of the patches of the driven layer is changed, the drive path of the induced current and the resonant state of the driven layer are changed accordingly, so that the polarization conversion states and the response frequency bands of the element are switched. As shown in Figure 2b, the 3-dB AR bandwidth and the corresponding center resonant frequency of the reflected waves are different along with the states of PIN diodes. In state “11”, two resonance points appear, making the AR bandwidth wider. This phenomenon as a consequence of an extra resonant mode is introduced by the two oblique slits when the patch structures in the unit cell are all connected. Figure 2c shows the phase difference of components in the u and v directions in different states. State “10” has a phase difference of −90° (RHCP) between 5 and 6.5 GHz, which is significantly different from other states. The result is the same as the preset, and the LHCP and RHCP waves can be realized in different states when the excitation is along the y-polarization direction. Therefore, MPC has the frequency-domain polarization selective function. The specific parameters are listed in Table 1. In particular, the surface as listed in Table 1. This is because the metasurface unit is optimized to a structure (symmetric in the diagonal direction) that is compatible with the polarization inversion technique. In summary, these results show that more functions can be introduced by more scattering resonances, such as crosspolarization conversion, ultra-wideband regulation, and so on. When more PIN diodes or active devices on the unit are introduced, on the one hand, the unit can be operated in more resonance frequency bands, and on the other hand, it can adjust the various states of the device more flexibly for different functions.
2.4. 1-Bit Programmable Metasurface in the Spatial Domain. When the polarization direction of the incident LP waves is 45° (counterclockwise rotation) from the +x-axis, the FSRM can modulate the incident waves in the spatial domain on the basis of the scattering parameters and convert itself into a 1- bit programmable metasurface, as shown in Table 2. In fact, Table 2. Index of the 1-Bit Reflected State of the Metasurface under the Case of 45° from the +x-Axis LP Incidence polarization state fractional bandwidth
| 3dB AR | fractional | center | |||
|---|---|---|---|---|---|
| bandwidth | bandwidth | frequency | x-axis LP | y-axis LP | |
| state | [GHz] | [%] | [GHz] | incidence | incidence |
| 10 | 5.18−6.15 | 17.12 | 5.67 | LHCP | RHCP |
| 01 | 5.95−6.30 | 5.72 | 6.13 | RHCP | LHCP |
| 00 | 6.21−6.85 | 9.80 | 6.53 | RHCP | LHCP |
| 11 | 6.81−7.57 | 10.57 | 7.19 | RHCP | LHCP |
[deg.] 1-bit quantization phase
[deg.] bandwidth [GHz] 0 1 54.6 to 105.6 −106.5 to −56.3 90 −90 6.1−6.6 when the phase difference is within the 180° ± 20° range, it meets the requirements of 1-bit phase change. 27,47 As shown in Figure 3, when the PIN diode #1 is “ON” and the PIN diode #2 is “OFF”, the reflection phase of the unit is around −90° (digital state 1) from 6.1 to 6.6 GHz. As the states of the two diodes are inverted simultaneously, the reflection phase of the unit cell is around 90° (digital state 0) in the same frequency band. In addition, the amplitudes of S 11 in two states are larger than −0.15 dB, indicating that the units can achieve nearly perfect 1- bit reflection characteristics, as shown in Figure 3. The proposed element is periodically arranged to construct a programmable metasurface (M × Q). The reflected E-field of the mq th unit in the spatial domain is given by Table 1. Parameters of the Reflected CP Waves under Different States in the Cases of LP Incidences along x-Axis and y-Axis 3dB AR bandwidth [GHz] Research Article
exp [− jk ( x sin θ cos φ + y sin θ sin φ ) + j Φ mq ] current distributions of the patch at states “10” and “11” are shown in Figure 2d,e. In addition, the amplitude and phase characteristics of the reflection coefficients under different polarization conversion states are shown in Figure S4.
It is worth pointing out that the 3-dB AR bandwidths in the four states are continuous, as illustrated in Figure 2b; hence, the polarization converter can convert the LP wave into the CP wave between 5.18 and 7.57 GHz, and the 3-dB AR relative bandwidth is up to 37.5%. Much more interestingly, the CP waves can be realized in different frequency bands under different states, and this function of MPC is called the frequency reconfigurable polarization conversion. The frequency reconfi- gurability allows the element to achieve different polarizations at the same frequency, and this feature is called polarization reconfigurable.
The functions of the frequency-domain-controllable polarization converter are described in detail in the Supporting Information. Furthermore, when an excitation is along the xpolarized direction, the polarization direction (LHCP or RHCP) of the reflected wave in different states will be reversed, (12) The subscript mq is a 2D representation of the p th unit of Section 2.1. Correspondingly, α n mq ≈ cos q e (θ) is the spatial modulation parameter of the mq th unit. As the reflected E-field is manipulated, the reflection phase of the metasurface element is compensated according to the continuous phase compensation formula. 48,49 Then, the continuous compensation phase
The discrete phases in eq 13 comprise the phase quantization error in the entire operating band. In the same situation, if the quantization phases of the unit are set to other values, the beam deflection error will increase and the metasurface radiation efficiency will decrease. According to the discrete compensation phase, the working states (state 0 or state 1) of the elements are determined. The scattering far-field of the programmable metasurface at the n-order harmonic frequency is written as 23558 https://dx.doi.org/10.1021/acsami.0c02467
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Notes Simultaneous Control of Phase and Amplitude. Adv. Mater. 2014, 26,
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ACKNOWLEDGMENTS This work is supported by the Outstanding Youth Science Foundation of Shaanxi Province (2019JC-15) and the National Key Research and Development Program of China. T.J.C. acknowledges the support from the National Key Research and Development Program of China (2017YFA0700201, 2017YFA0700202, and 2017YFA0700203), the National Science Foundation of China (61631007 and 61571117), and the 111 Project (111-2-05). ■
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